OPTICALLY-BIASED, EDGE-COUPLED INP INGAAS HETEROJUNCTION PHOTOTRANSISTORS/

Authors
WAKE D NEWSON DJ HARLOW MJ HENNING ID
Citation
D. Wake et al., OPTICALLY-BIASED, EDGE-COUPLED INP INGAAS HETEROJUNCTION PHOTOTRANSISTORS/, Electronics Letters, 29(25), 1993, pp. 2217-2219
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
25
Year of publication
1993
Pages
2217 - 2219
Database
ISI
SICI code
0013-5194(1993)29:25<2217:OEIIHP>2.0.ZU;2-D
Abstract
InP/GaAs heterojunction phototransistors are reported with high DC gai n (greater than 270) and high unity-gain frequency (greater than 30 GH z). To the authors' knowledge, these are the highest performance heter ojunction phototransistors reported to date. This performance is achie ved by a combination of edge-coupled optical access and a two-terminal , optically-biased design. This design allows efficient, small area de vices with low parasitics to be produced with a simple fabrication sch eme.