HIGH-FREQUENCY GAAS AL0.25GA0.75AS HETEROJUNCTION BIPOLAR-TRANSISTORSWITH TRANSPARENT INDIUM-TIN-OXIDE EMITTER CONTACTS/

Authors
LI WQ KARAKUCUK M KULMAN J EAST JR HADDAD GI BHATTACHARYA PK
Citation
Wq. Li et al., HIGH-FREQUENCY GAAS AL0.25GA0.75AS HETEROJUNCTION BIPOLAR-TRANSISTORSWITH TRANSPARENT INDIUM-TIN-OXIDE EMITTER CONTACTS/, Electronics Letters, 29(25), 1993, pp. 2223-2225
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
25
Year of publication
1993
Pages
2223 - 2225
Database
ISI
SICI code
0013-5194(1993)29:25<2223:HGAHB>2.0.ZU;2-2
Abstract
The authors have characterised a GaAs/Al0.25Ga0.75As heterojunction bi polar transistor (HBT) with transparent indium tin oxide (ITO) emitter contacts. An ITO to n-GaAs contact resistance of 2 x 10(-7)OMEGA/cm2 was measured with 50angstrom of indium as a prelayer. HBT devices with f(T) = 18GHz, f(max) = 20 GHz, and optical pulse response of 80ps FWH M have been measured. The results indicate that this device technology is a good candidate for application in optically controlled microwave circuits.