PROPOSAL FOR THE CONCEPT OF ULTRADENSE INTEGRATED MEMORIES BASED ON COULOMB-BLOCKADE AT ROOM-TEMPERATURE

Coulomb-blockade results are recorded at room temperature and normal p ressure in monolithically integrated structures using GaAs wedges with a radius of approximately 25nm and a minimal gap to the anode when a quasi-vacuum can be assumed. These devices have very low capacitances being of order 10(-18)F. A concept is presented where this Coulomb blo ckade is used for signal production and storage in an ultra-dense memo ry-matrix application. A one-dimensional high-electron mobility hetero structure together with local resonant interband tunnelling, isolated by deep ion implantation are proposed for the buried layer access elec tronics.