THE SPATIAL LOCATION OF THE INTERMEDIATE NEW PHASE PRECIPITATE LAYER DURING SOI STRUCTURE FABRICATION

It is likely that during the substoichiometric ion beam synthesis of S OI structures the intermediate new phase precipitate layer known as th e 'hump' is formed. It has been shown that the depth location of the ' hump' is correlated with the average size of the new phase nuclei in t he growing insulating layer. After postimplantation annealing the 'hum p' is localized closer to the sample surface given the average size of the nuclei is decreased. The conditions for which the forming SOI str ucture has no 'hump' have been established.