INVESTIGATION OF MULTILAYER SOI STRUCTURES BY ELECTROREFLECTANCE SPECTROSCOPY

Silicon-on-insulator (SOI) structures formed by high-dose ion implanta tion were investigated using the electroreflectance spectroscopy (ER) method. The spatial distributions of defects and mechanical stresses i n the silicon overlayer as well as the properties of the interface bet ween buried dielectric layer and silicon substrate were studied. It is shown that combined implantation of C+, O+ and N+ ions allows one to create SOI structures with a defectless superficial silicon layer. Sup plementary investigations of the above mentioned SOI structures were a lso carried out by the Auger electron spectroscopy, transmission elect ron microscopy and I-V characteristic method.