LOCAL INTERFACE COMPOSITION AND BAND DISCONTINUITIES IN HETEROVALENT HETEROSTRUCTURES

Authors
NICOLINI R VANZETTI L MULA G BRATINA G SORBA L FRANCIOSI A PERESSI M BARONI S RESTA R BALDERESCHI A ANGELO JE GERBERICH WW
Citation
R. Nicolini et al., LOCAL INTERFACE COMPOSITION AND BAND DISCONTINUITIES IN HETEROVALENT HETEROSTRUCTURES, Physical review letters, 72(2), 1994, pp. 294-297
Citations number
29
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
72
Issue
2
Year of publication
1994
Pages
294 - 297
Database
ISI
SICI code
0031-9007(1994)72:2<294:LICABD>2.0.ZU;2-A
Abstract
The local Zn/Se relative concentration at the interface in ZnSe-GaAs(0 01) heterostructures synthesized by molecular beam epitaxy was found t o be controlled by the Zn/Se flux ratio employed during the early grow th stage of ZnSe on GaAs. Correspondingly, the valence band discontinu ity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interf ace). Comparison with the results of first-principles calculations sug gests that the observed trend in band offsets is related to the establ ishment of neutral interfaces with different atomic configurations.