OXYGEN EFFECT ON THE OPERATION OF THE MOS-STRUCTURE-BASED HYDROGEN SENSOR

Authors
FILIPPOV V TERENTJEV A YAKIMOV S
Citation
V. Filippov et al., OXYGEN EFFECT ON THE OPERATION OF THE MOS-STRUCTURE-BASED HYDROGEN SENSOR, Sensors and actuators. B, Chemical, 17(2), 1994, pp. 121-124
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. B, Chemical → ACNP
ISSN journal
09254005
Volume
17
Issue
2
Year of publication
1994
Pages
121 - 124
Database
ISI
SICI code
0925-4005(1994)17:2<121:OEOTOO>2.0.ZU;2-W
Abstract
The influence of oxygen on the operation of hydrogen sensors based on MOS devices (capacitor) with palladium and platinum electrodes has bee n investigated. An effect of oxygen on the effective hydrogen sensitiv ity energy and the flat-band voltage-change kinetics DELTAU(t) of the sensor with a Pt gate has been detected. The dependence of the initial rate of change of the flat-band voltage upon introduction of a gas mi xture versus oxygen concentration has been obtained. A difference betw een them for sensors based on Pt-SiO2-Si and Pd-SiO2-Si is observed at a working temperature above 130-degrees-C.