MICROCHARACTERIZATION TO NANO-CHARACTERIZATION OF SEMICONDUCTOR GRAIN-BOUNDARIES

This paper examines the use of surface-analysis methods in the charact erization of grain boundaries in semiconductors. The purpose is to dem onstrate the utility of increasing spatial resolution in the evaluatio n of defects. Three distinct mechanisms for adjusting the electronic p roperties of defect regions of semiconductors are presented. These inc lude the passivation of grain boundaries by chemical methods; the elec trical neutralization of shallow acceptor impurities; and, the doping of the defect regions. Secondary ion mass spectrometry, Auger electron spectroscopy and specialized scanning tunneling microscopy are used t o evaluate the grain-boundary structure, composition and chemistry. Co mplementary macro- and nano-electro-optical characterization technique s based on electron-beam-induced current and photoluminescence provide correlated information on the effects of the chemical-treatment metho ds.