INVESTIGATION OF THE FORMATION OF TRANSITION LAYERS DURING LPE GROWTHOF GAAS

Authors
BRUK AS GOVORKOV AV MILVIDSKII MG POPOVA EV SHLENSKII AA YUGOVA TG
Citation
As. Bruk et al., INVESTIGATION OF THE FORMATION OF TRANSITION LAYERS DURING LPE GROWTHOF GAAS, Scanning, 15(6), 1993, pp. 333-337
Citations number
1
Categorie Soggetti
Microscopy
Journal title
Scanning → ACNP
ISSN journal
01610457
Volume
15
Issue
6
Year of publication
1993
Pages
333 - 337
Database
ISI
SICI code
0161-0457(1993)15:6<333:IOTFOT>2.0.ZU;2-A
Abstract
The properties of the near surface region in GaAs substrates doped wit h Sn and Te are studied after annealing in H-2 flow or under controlle d As overpressure. The transition regions between the bulk and the sur face are formed upon such annealing. Also, the distribution of recombi nation centres across these transition regions is governed by defects diffused from the substrate and generated in the epitaxial layer.