DETERMINATION OF LOCAL DEEP-LEVELS HOMOGENEITY USING SEM

A method to study microhomogeneity of deep centres in high resistivity and low resistivity semiconductors is described herein. It Uses measu rements of current decay induced in Schottky diodes and p-n junctions by a probing electron beam of an SEM and is closely related to a metho d of photoelectron relaxation spectroscopy. The advantages of this met hod are demonstrated for an example of dislocation-related inhomogenei ty in semi-insulating GaAs.