ELECTRONIC-STRUCTURE OF F-ELEMENT SYSTEMS IN THE UV AND VUV ENERGY-RANGE

The main interest of this work is focused on the localization in energ y of the different photon absorption mechanisms occurring in fluoride systems doped with rare earth ions by recording the visible luminescen ce excited by UV and VUV photons between 5 to 25 eV. Low temperature e xperiments have provided opportunity to measure in good conditions the charge transfer and the excited 4f(n-1)5d configuration transitions i n the LaF3:Ln(3+), O(2-)systems (Ln = Eu, Dy, Er).