ANGLE-RESOLVED PHOTOEMISSION-STUDY OF AN IN-GAP STATE IN TIO2

Authors
KODAIRA S SAKISAKA Y MARUYAMA T HARUYAMA Y AIURA Y KATO H
Citation
S. Kodaira et al., ANGLE-RESOLVED PHOTOEMISSION-STUDY OF AN IN-GAP STATE IN TIO2, Solid state communications, 89(1), 1994, pp. 9-12
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
89
Issue
1
Year of publication
1994
Pages
9 - 12
Database
ISI
SICI code
0038-1098(1994)89:1<9:APOAIS>2.0.ZU;2-0
Abstract
An in-gap state formed in the band gap of TiO2 upon surface oxygen-vac ancy doping has been studied by angle-resolved photoemission spectrosc opy. The in-gap state with a formal d(1) configuration exhibits a smal l (1X1) k dispersion, though it never crosses the Fermi level for all the: oxygen-vacancy concentration range. We propose that a polaron int eraction is responsible for the localization of doped electrons in the in-gap state.