A STUDY OF THE PROFILE OF THE E3 ELECTRON TRAP IN GAAS

Authors
KOURKOUTAS CD KOVACS B EUTHYMIOU PC SZENTPALI B SOMOGYI K GIAKOUMAKIS GE
Citation
Cd. Kourkoutas et al., A STUDY OF THE PROFILE OF THE E3 ELECTRON TRAP IN GAAS, Solid state communications, 89(1), 1994, pp. 45-49
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
89
Issue
1
Year of publication
1994
Pages
45 - 49
Database
ISI
SICI code
0038-1098(1994)89:1<45:ASOTPO>2.0.ZU;2-J
Abstract
Electron irradiation at room temperature introduces in GaAs a donor ty pe electronic state Tx at 0.18eV, which is associated with the E3 elec tron trap. The presence of Tx is observed at depths d > 1.5 mu m, whic h correspond to the limits of the depletion region under the highest a pplied reverse bias voltage, while the E3 trap concentration drops off into the same region.