EPITAXY OF HIGH-RESISTIVITY INP ON SI

Authors
SCHNABEL RF KROST A GRUNDMANN M HEINRICHSDORFF F BIMBERG D PILATZEK M HARDE P
Citation
Rf. Schnabel et al., EPITAXY OF HIGH-RESISTIVITY INP ON SI, Applied physics letters, 63(26), 1993, pp. 3607-3609
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
26
Year of publication
1993
Pages
3607 - 3609
Database
ISI
SICI code
0003-6951(1993)63:26<3607:EOHIOS>2.0.ZU;2-7
Abstract
Low pressure metalorganic chemical vapor deposition of undoped and Fe- doped InP on vicinal Si(001) and Si(111) is reported. For concentratio ns up to 8 X 10(16) cm-3 the incorporated Fe is found to be entirely e lectrically active. Semi-insulating InP on Si(111) with a resistivity of 3 X 10(7) OMEGA cm has been obtained. The resistivity increases str ongly with decreasing defect density in the InP:Fe epitaxial layers. A reduction of the crystal defect density by one order of magnitude in InP/Si(111) as compared to InP/Si(001) almost suppresses the undesired effects of strong Si incorporation and parasitic conductance channels .