INSB P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR PREPARED BY PHOTOENHANCED CHEMICAL-VAPOR-DEPOSITION

The InSb metal-oxide-semiconductor-field-effect transistor (MOSFET) wa s fabricated successfully. The SiO2 prepared by photoenhanced chemical vapor deposition was used both as the gate insulator and the source/d rain passivation layer to reduce the source/drain pn junction surface leakage current. The common-source current-voltage (I-V) characteristi cs show a breakdown voltage exceeding 2 V indicating excellent pn junc tion reverse characteristics. The achieved field-effect mobility for a hole in the linear region is 230 cm2/V s. An anomalous kink effect is observed in the common-source I-V characteristics when the substrate is floating.