APPLICATIONS OF RHEED TO THE STUDY OF GROWTH DYNAMICS AND SURFACE-CHEMISTRY DURING MBE

We discuss three applications of RHEED to the study of semiconductor f ilm growth by MBE. In the first we discuss the extension of the vicina l plane method to the in-situ measurement of step propagation rates an d show how they vary with growth parameters. The second concerns some apparent anomalies in the RHEED response to the growth of GaAs on GaAs (110) surfaces. Finally we consider surface chemical processes (reacti on and segregation) in the growth of Si and SiGe alloys from molecular beams of Si2H6 and GeH4. We demonstrate that the in-situ measurement of the growth rate on a monolayer-by-monolayer basis can provide quite detailed chemical information.