ANALYSIS OF GATE OXIDE SHORTS IN CMOS CIRCUITS

Authors
HAO H MCCLUSKEY EJ
Citation
H. Hao et Ej. Mccluskey, ANALYSIS OF GATE OXIDE SHORTS IN CMOS CIRCUITS, I.E.E.E. transactions on computers, 42(12), 1993, pp. 1510-1516
Citations number
24
Categorie Soggetti
Computer Sciences","Engineering, Eletrical & Electronic","Computer Science Hardware & Architecture
Journal title
I.E.E.E. transactions on computers → ACNP
ISSN journal
00189340
Volume
42
Issue
12
Year of publication
1993
Pages
1510 - 1516
Database
ISI
SICI code
0018-9340(1993)42:12<1510:AOGOSI>2.0.ZU;2-#
Abstract
This correspondence analyzes the resistance dependence, voltage depend ence, temperature dependence, and pattern dependence properties of CMO S logic gate operation in the presence of gate. oxide shorts. The anal ysis is based on realistic defect models that incorporate the resistiv e nature of gate oxide shorts and the difference between gate oxide sh orts in n- and p-channel transistors.