2-PHOTON INTERBAND-TRANSITIONS IN CROSSED ELECTRIC AND MAGNETIC-FIELDS IN SEMICONDUCTORS - NONLOCAL EFFECTS

Authors
DESALVO E GIRLANDA R
Citation
E. Desalvo et R. Girlanda, 2-PHOTON INTERBAND-TRANSITIONS IN CROSSED ELECTRIC AND MAGNETIC-FIELDS IN SEMICONDUCTORS - NONLOCAL EFFECTS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 15(10), 1993, pp. 1321-1329
Citations number
25
Categorie Soggetti
Physics
Journal title
Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics → ACNP
ISSN journal
03926737
Volume
15
Issue
10
Year of publication
1993
Pages
1321 - 1329
Database
ISI
SICI code
0392-6737(1993)15:10<1321:2IICEA>2.0.ZU;2-Z
Abstract
It is shown that in the presence of a crossed electric and magnetic fi eld the electronic states of a semiconductor in the effective-mass app roximation are described by a Hamiltonian containing a non-local poten tial. In order to preserve the gauge invariance of the two-photon inte rband transition rate, the interaction Hamiltonian between the electro ns and the incident radiation has to be generalized. For GaAs, the tra nsition rate between two particular levels is evaluated in both length and velocity gauges demonstrating the correctness of our approach.