INGAAS GAAS MULTIPLE-QUANTUM-WELL MODULATORS AND SWITCHES/

Authors
STOHR A HUMBACH O ZUMKLEY S WINGEN G DAVID G JAGER D BOLLIG B LARKINS EC RALSTON JD
Citation
A. Stohr et al., INGAAS GAAS MULTIPLE-QUANTUM-WELL MODULATORS AND SWITCHES/, Optical and quantum electronics, 25(12), 1993, pp. 190000865-190000883
Citations number
60
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Optical and quantum electronics → ACNP
ISSN journal
03068919
Volume
25
Issue
12
Year of publication
1993
Pages
190000865 - 190000883
Database
ISI
SICI code
0306-8919(1993)25:12<190000865:IGMMAS>2.0.ZU;2-T
Abstract
The design, fabrication and characterization of electrooptical modulat ors and switches based on pseudomorphic InGaAs/GaAs multiple-quantum-w ell (MQW) structures is presented. The absorption and refractive index changes (DELTAalpha, DELTAn) of In0.2Ga0.8As/GaAs MQW structures due to the quantum-confined Stark effect are examined in detail. The figur es of merit DELTAalpha/alpha0 and DELTAn/alpha0 give information on th e design of modulation and switching devices. Based on these resuLts, we develop two types of efficient and high-speed modulators, verticaL and waveguide modulators, and for the first time an InGaAs/GaAs inters ectional X-type switch. Recent experimental results for each device ar e presented.