BORON-NITRIDE FILMS PREPARED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FROM BORAZINE (B3N3H6)

The quality of boron nitride thin films prepared by remote plasma-enha nced chemical vapour deposition, using borazine as a precursor substan ce, have been analysed based on IR spectra. The process for the film d eposition consists of a noble gas or nitrogen excitation in an r.f. pl asma; transport of the excited gas out of the plasma region; mixing of it with the neutral molecules of borazine out of the plasma region to form precursor species; and a reaction at a heated substrate to form the films. It was shown that the use of different r.f excited gases le ads to qualitatively different local bonding in the deposited films. A n empirical equation to describe the growth velocity of a film was obt ained.