The synthesis of polycrystalline thin films of cubic ZnSe by electroch
emical plating on conducting substrates is described. The influence of
deposition parameters such as electrolyte composition, deposition pot
ential and temperature on the crystallinity and on the chemical compos
ition of the films is discussed. Of the various plating techniques (po
tentiostatic, potentiodynamic pulse and galvanostatic), potentiostatic
plating offers the best control of film composition. An excess of Se
with respect to perfect stoichiometry cannot be avoided by adjusting e
lectrolyte composition and deposition potential, but can be decreased
by vacuum annealing.