ELECTRODEPOSITION OF ZINC SELENIDE

Citation
C. Natarajan et al., ELECTRODEPOSITION OF ZINC SELENIDE, Thin solid films, 237(1-2), 1994, pp. 118-123
Citations number
22
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
237
Issue
1-2
Year of publication
1994
Pages
118 - 123
Database
ISI
SICI code
0040-6090(1994)237:1-2<118:EOZS>2.0.ZU;2-L
Abstract
The synthesis of polycrystalline thin films of cubic ZnSe by electroch emical plating on conducting substrates is described. The influence of deposition parameters such as electrolyte composition, deposition pot ential and temperature on the crystallinity and on the chemical compos ition of the films is discussed. Of the various plating techniques (po tentiostatic, potentiodynamic pulse and galvanostatic), potentiostatic plating offers the best control of film composition. An excess of Se with respect to perfect stoichiometry cannot be avoided by adjusting e lectrolyte composition and deposition potential, but can be decreased by vacuum annealing.