HALL-EFFECT IN MNTE FILMS

Citation
Ma. Angadi et V. Thanigaimani, HALL-EFFECT IN MNTE FILMS, Thin solid films, 237(1-2), 1994, pp. 187-192
Citations number
22
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
237
Issue
1-2
Year of publication
1994
Pages
187 - 192
Database
ISI
SICI code
0040-6090(1994)237:1-2<187:HIMF>2.0.ZU;2-V
Abstract
The Hall effect is reported for MnTe films of different compositions a nd thicknesses in the range 25-150 nm. Both R(o) and R(s) exhibit a pr onounced size effect. R(o) remains negative for the entire thickness r ange studied, while the sign of R(s) depends on the substrate temperat ure and the tellurium content in the films. The extraordinary Hall coe fficient is found to be proportional to the square of the total film r esistivity, which suggests that the asymmetric scattering process is p redominant at room temperature.