FABRICATING HIGH-RESOLUTION AMEL FLAT-PANEL DISPLAYS

Citation
M. Aguilera et B. Aitchison, FABRICATING HIGH-RESOLUTION AMEL FLAT-PANEL DISPLAYS, Solid state technology, 39(11), 1996, pp. 109
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
0038111X
Volume
39
Issue
11
Year of publication
1996
Database
ISI
SICI code
0038-111X(1996)39:11<109:FHAFD>2.0.ZU;2-0
Abstract
A new silicon-based design for active-matrix electroluminescent (AMEL) flat panel displays can achieve the high resolutions required for tod ay's computer applications. The displays' boast a dot pitch of only 24 mu m (>1000 lines/in.) and resolutions of 640 x 480 and 1280 x 1024 p ixels. Each pixel of a display needs its own addressing transistor, a data-hold capacitor, and a high-voltage switching transistor. All row- and column-drivers are also located on the same chip. AMEL displays a re fabricated using silicon-on-insulator (SOI) wafers with mostly stan dard CMOS processing. A refractory metal interconnect is needed to wit hstand the high temperatures and extended times required for the elect roluminescent (EL)-film deposition process.