The decade of the 1990's is an opportune time for scientists and engin
eers to create cost-effective silicon ''superchips'' that merge silico
n photonics with advanced silicon electronics on a silicon substrate.
We can expect significant electrooptical devices from Column IV materi
als (Si, Ge, C, and Sn) for a host of applications. The best devices w
ill use strained-layer epitaxy, doped heterostructures, and bandgap en
gineering of quantum-confined structures. This paper reviews Si-based
photonic components and optoelectronic integration techniques, both hy
brid and monolithic.