ORIGIN OF OXYGEN-INDUCED LAYER-BY-LAYER GROWTH IN HOMOEPITAXY ON PT(111)

Citation
S. Esch et al., ORIGIN OF OXYGEN-INDUCED LAYER-BY-LAYER GROWTH IN HOMOEPITAXY ON PT(111), Physical review letters, 72(4), 1994, pp. 518-521
Citations number
12
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
72
Issue
4
Year of publication
1994
Pages
518 - 521
Database
ISI
SICI code
0031-9007(1994)72:4<518:OOOLGI>2.0.ZU;2-D
Abstract
Whereas on the clean Pt(111) surface Pt grows in a multilayer (3D) mod e at 300 and 400 K, preadsorption of an ordered p(2 x 2) oxygen overla yer leads to a high quality layer-by-layer (2D) growth with the oxygen floating on the film. In contrast to other surfactants oxygen can be completely removed from the film surface at the growth temperature. It is demonstrated that the presence of oxygen reduces the barrier heigh t for the motion of Pt adatoms across step edges. This facilitates the interlayer mass transport and thus the layer-by-layer growth.