SOME ASPECTS OF THE MULTIINTERFACE STRUCTURE FOR BSF SOLAR-CELLS

Beginning in the early seventies a special kind of multi-interface hig h-efficiency solar cell has been developed. One of the most important particularities of these devices, that are known as back surface field (BSF) cells, is their L-H homointerface. Several analytical models ha ve been formulated to explain the role that this interface plays in mi nority carrier recombination, but its fine electrical structure is nor mally neglected or limited to Gunn's general approach. In experimental and theoretical approaches a long range interaction between this inte rface and minority carrier transport properties (much longer than the majority carrier interactions) has been demonstrated. This paper revie ws some details of the electrical structure of an abrupt L-H homointer face and tries to explain this phenomenon on the basis of a recent sta tionary-state description of accumulation layer fractions (which are e specially interesting for the exploration of minority carrier recombin ation mechanisms).