STRAIN DISTRIBUTION DURING GROWTH OF GE SI(001) AND THE EFFECT OF SURFACTANT LAYERS/

Grazing incidence X-ray diffraction has been employed to determine dir ectly the distribution of strain in the plane of the interface during deposition of Ge onto Si(001). The corresponding strain distribution h as also been deduced for a relaxed island whose atomic structure has b een determined by molecular dynamics. The results illustrate the centr al role of elastic deformation of islands in the initial stage of stra in relief. The results are also compared with those for growth with a Sb surfactant layer which suppresses island formation. An investigatio n of surfactant-like behaviour is also presented for homoepitaxial gro wth of Ag on Ag(111), where submonolayer coverages of Sb promote a lay er-by-layer growth mode over a wide temperature range.