Defect induced inversion of conductivity type was studied both at the
surface and at a network of interfacially confined misfit dislocations
in heteroepitaxial Si(Ge) on Si structures. The inversion was achieve
d by controlled contamination with Au and Ni metallic impurities intro
duced by diffusion from backside evaporated layers. A theoretical expl
anation of the defect electrical activity and the inversion effect is
presented, along with temperature dependent beam induced current obser
vations.