ELECTRON-BEAM-INDUCED CURRENT STUDIES OF DEFECT-INDUCED CONDUCTIVITY INVERSION

Authors
RADZIMSKI ZJ BUCZKOWSKI A ZHOU TQ DUBE C ROZGONYI GA
Citation
Zj. Radzimski et al., ELECTRON-BEAM-INDUCED CURRENT STUDIES OF DEFECT-INDUCED CONDUCTIVITY INVERSION, Scanning microscopy, 7(2), 1993, pp. 513-521
Citations number
19
Categorie Soggetti
Microscopy
Journal title
Scanning microscopy → ACNP
ISSN journal
08917035
Volume
7
Issue
2
Year of publication
1993
Pages
513 - 521
Database
ISI
SICI code
0891-7035(1993)7:2<513:ECSODC>2.0.ZU;2-4
Abstract
Defect induced inversion of conductivity type was studied both at the surface and at a network of interfacially confined misfit dislocations in heteroepitaxial Si(Ge) on Si structures. The inversion was achieve d by controlled contamination with Au and Ni metallic impurities intro duced by diffusion from backside evaporated layers. A theoretical expl anation of the defect electrical activity and the inversion effect is presented, along with temperature dependent beam induced current obser vations.