TEMPERATURE-DEPENDENCE OF BORON ADSORPTION DURING HBO2 IRRADIATION ONSI(111) SURFACE EVALUATED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

Adsorption of boron on Si(111) surface during HBO2 irradiation was eva luated by reflection high-energy electron diffraction (RHEED). At the substrate temperature above 700-degrees-C, RHEED specular beam intensi ty decreased to a minimum value at boron coverage of 1/3 monolayer (ML ), and then increased to the initial value (1 ML coverage). On the oth er hand, when the substrate temperature was below 700-degrees-C, inten sity did not recover to the initial value due to the simultaneous surf ace oxidation. From the temperature dependence of the adsorption rate, the activation energy of the boron adsorption on Si(lll) surface was estimated to be 1.2 eV.