Y. Kumagai et al., TEMPERATURE-DEPENDENCE OF BORON ADSORPTION DURING HBO2 IRRADIATION ONSI(111) SURFACE EVALUATED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, JPN J A P 2, 33(1A), 1994, pp. 120000001-120000004
Adsorption of boron on Si(111) surface during HBO2 irradiation was eva
luated by reflection high-energy electron diffraction (RHEED). At the
substrate temperature above 700-degrees-C, RHEED specular beam intensi
ty decreased to a minimum value at boron coverage of 1/3 monolayer (ML
), and then increased to the initial value (1 ML coverage). On the oth
er hand, when the substrate temperature was below 700-degrees-C, inten
sity did not recover to the initial value due to the simultaneous surf
ace oxidation. From the temperature dependence of the adsorption rate,
the activation energy of the boron adsorption on Si(lll) surface was
estimated to be 1.2 eV.