LARGE INDUCED ABSORPTION CHANGE IN POROUS SILICON AND ITS APPLICATIONTO OPTICAL LOGIC GATES

Authors
MATSUMOTO T HASEGAWA N TAMAKI T UEDA K FUTAGI T MIMURA H KANEMITSU Y
Citation
T. Matsumoto et al., LARGE INDUCED ABSORPTION CHANGE IN POROUS SILICON AND ITS APPLICATIONTO OPTICAL LOGIC GATES, JPN J A P 2, 33(1A), 1994, pp. 120000035-120000036
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
33
Issue
1A
Year of publication
1994
Pages
120000035 - 120000036
Database
ISI
SICI code
Abstract
A large optically induced absorption change was observed in porous sil icon. The relative intensity change of the transmitted beam is on the order of 50%. Using this phenomenon, we have demonstrated all-optical logic gates such as inverters or NOR functions. These results point to the possibility of fabricating all-optical integrated circuits on a S i substrate.