TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY OF POROUS SILICON

Time-resolved photoluminescence (PL) spectra of porous Si have been in vestigated between 25 and 295 K. At high temperatures the PL band show s within a period of 110 mu s after excitation a continuous redshift f rom 630 to 675 nm. In the ns-regime a rich fine structure of the PL ba nd was observed. This could be decomposed into three peaks and their a ssociated phonon replica with the 1100cm(-1) stretching mode of Si-O-S i. These peaks are located in the region of the predicted lowest excit on transitions of porous Si.