Excitation spectroscopy of the luminescence, selective excitation phot
oluminescence, time-resolved photoluminescence and time-decay measurem
ents of the photoluminescence have been carried out on various porous
silicon samples. A very rich phenomenology of the luminescence has bee
n measured. Strong evidence has been found for emission processes due
to a strongly disordered system both topologically and energetically.
No definitive responses about the origin of the luminescence in p-Si a
re found but some promising points for further investigations are unde
rlined.