TEMPERATURE-DEPENDENCE OF LUMINESCENCE IN POROUS SILICON AND RELATED MATERIALS

We have investigated the temperature dependence of the visible lumines cence of porous silicon and other Si-based luminescent materials (as-p repared and annealed siloxene, amorphous Si:O:H alloys) at temperature s between 10 and 359 K. In all samples, the decrease of the luminescen ce intensity, I(T), at temperatures >100 K can be described by the rel ation I-0/I (T) = 1 + exp(T/T-0). At temperatures <100 K, some of the strongly luminescent samples show a decrease of the luminescence inten sity with decreasing temperature. We have found this decrease to be re lated to a ''fine structure'' in the luminescence spectra of yet unkno wn origin.