CARRIER INJECTION AND TRANSPORT IN POROUS SILICON SCHOTTKY DIODES

The carrier injection and transport in bulk Si-porous Si-metal diodes is studied by impedance and photoresponse spectroscopy. The independen ce of the diode prefactor from the metal contact work function and the spatially resolved photocurrent identify the rectification as occurri ng at the bulk Si/porous Si interface. The impedance of the junction s hows a generation-recombination current in the depletion region of the interface. The series resistance is thermally activated which we asso ciate with a small Schottky barrier formed by the metal on the porous Si.