DOMAIN-WALL MOTION IN RE-TM FILMS WITH DIFFERENT THICKNESS

Citation
Tg. Pokhil et En. Nikolaev, DOMAIN-WALL MOTION IN RE-TM FILMS WITH DIFFERENT THICKNESS, IEEE transactions on magnetics, 29(6), 1993, pp. 2536-2538
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189464
Volume
29
Issue
6
Year of publication
1993
Part
1
Pages
2536 - 2538
Database
ISI
SICI code
0018-9464(1993)29:6<2536:DMIRFW>2.0.ZU;2-G
Abstract
A thermally activated domain wall motion was studied in amorphous TbFe films with different thickness. The activation energy of the domain w all displacement process was determined for the films with various com position and thickness; it is about 2.5 eV. The activation volume of t his process nonlinearly increases from 2x10(-18) cm3 to 7x10(-18) cm3 as the film thickness increases from 25 nm to 400 nm. The change of th e domain shape with the film thickness growth and domain wall coercive force dependence on film thickness are discussed in terms of thermoac tivated domain wall motion.