MAGNETIC-ANISOTROPY INDUCED BY FIELD APPLIED DURING DEPOSITION IN SPUTTERED AMORPHOUS COZR-RARE EARTH THIN-FILMS

Citation
G. Suran et al., MAGNETIC-ANISOTROPY INDUCED BY FIELD APPLIED DURING DEPOSITION IN SPUTTERED AMORPHOUS COZR-RARE EARTH THIN-FILMS, IEEE transactions on magnetics, 29(6), 1993, pp. 3055-3057
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189464
Volume
29
Issue
6
Year of publication
1993
Part
1
Pages
3055 - 3057
Database
ISI
SICI code
0018-9464(1993)29:6<3055:MIBFAD>2.0.ZU;2-A
Abstract
The formation of the coherent magnetic anisotropy was investigated in amorphous (Co0.93 Zr 0.07)100-x (RE)x RE = rare earth films as a funct ion of the magnitude of the magnetic field H(d) applied during deposit ion. The direction of the induced anisotropy depend upon the peculiar rare earth substituted. For RE = Sm and Gd a biaxial anisotropy is for med composed of a perpendicular anisotropy K(p) and of K(u). The devel opment of K(p) is linked to H(d) . K(p) is negligible for very small H (d) and increases strongly, and the short range chemical inhomogeneiti es are progressively suppressed as H(d) is increased. A mechanism is s uggested to explain the results.