MAGNETOSTRICTION IN FETAN THIN-FILMS

Magnetostriction has been studied in FeTaN single layer thin films dep osited by high power density, high growth rate, dc magnetron sputterin g. Magnetostriction was found to increase linearly with the nitrogen c ontent of the films, passing from negative to positive with increasing nitrogen content. Thinner films exhibited larger positive magnetostri ction than thicker films deposited at the same nitrogen flow rate. Fil m stress was found to be tensile in as-deposited films grown at zero n itrogen pressure. As the nitrogen content in the films increased, the film stress changed from tensile to compressive and increased in magni tude while annealing at 300-degrees-C reduced the magnitude of film st ress without affecting magnetostriction. Stress anisotropy was found t o reach a minimum at low nitrogen flow rate, and stripe domain formati on accompanied large stress anisotropy at high nitrogen flow rates.