METAL ELECTRODEPOSITION ON SEMICONDUCTORS .3. DESCRIPTION OF CHARGE-TRANSFER AND IMPLICATION FOR THE FORMATION OF SCHOTTKY DIODES

Capacitance measurements have been used to localize the position of se miconductor band edges before and during the early stages of electrode position of various metals on n-GaAs and n-InP. Energy diagrams of the contact during film formation indicate a close relation between the m ovements of band edges of the semiconductor and the mechanism of elect rochemical deposition. Results yield information regarding electron tr ansfer during nucleation. It seems that surface states are involved as mediators. An example illustrates the fundamental importance of the e arly stages of electron transfer for the final properties of the inter face. A method using a double pulse is used successfully to overcome t his difficulty in the case of InP.