COAXIAL IMPACT COLLISION ION-SCATTERING SPECTROSCOPY MEASUREMENTS OF AS SI(100) STRUCTURE PREPARED BY IONIZED CLUSTER BEAM METHOD/

The surface structure of a Si (100) substrate exposed to an As ionized cluster beam (ICB) prior to epitaxial growth of GaAs was investigated by means of coaxial impact collision ion scattering spectroscopy (CAI CISS). As a result of the measurement, first, it was proven that both As and Si dimers were formed after As ICB exposure. Second, both As an d Si atoms form double domains of 2 x 1 and 1 x 2, and both As and Si areas of one domain are larger than those of the other domain in the c ase of a 3-degrees-off Si substrate. Furthermore, it is likely that As atoms terminate Si atoms as if the As atoms replace the top Si layer. Third, the Si surface is not damaged by As ICB exposure, and the As i ons seem to be implanted to the substitutional sites.