T. Kawai et M. Hanabusa, NUCLEATION AND FILM GROWTH IN PHOTOCHEMICAL VAPOR-DEPOSITION OF ALUMINUM THIN-FILM USING DIMETHYLALUMINUM HYDRIDE, JPN J A P 1, 32(10), 1993, pp. 4690-4693
In the deposition of aluminum thin films on silicon oxide via a photoc
hemical surface reaction of dimethylaluminum hydride (DMAH) induced by
a deuterium lamp, the initial nucleation period was independent of ga
s pressure and became shorter with increasing UV intensity,whereas the
rate of subsequent film growth on underlying aluminum layers increase
d with gas pressure, but it became independent of UV intensity and gro
wth continued even without irradiation. We concluded that on the subst
rate surface photodissociation of adsorbates took place more slowly th
an adsorption of DMAH, while on growing aluminum layers the thermal de
composition of source molecules was dominant.