NUCLEATION AND FILM GROWTH IN PHOTOCHEMICAL VAPOR-DEPOSITION OF ALUMINUM THIN-FILM USING DIMETHYLALUMINUM HYDRIDE

In the deposition of aluminum thin films on silicon oxide via a photoc hemical surface reaction of dimethylaluminum hydride (DMAH) induced by a deuterium lamp, the initial nucleation period was independent of ga s pressure and became shorter with increasing UV intensity,whereas the rate of subsequent film growth on underlying aluminum layers increase d with gas pressure, but it became independent of UV intensity and gro wth continued even without irradiation. We concluded that on the subst rate surface photodissociation of adsorbates took place more slowly th an adsorption of DMAH, while on growing aluminum layers the thermal de composition of source molecules was dominant.