S. Sakakibara et al., CHARACTERISTICS OF NITROGEN-DOPED ZNTE FILMS AND ZNTE-ZNSE SUPERLATTICES GROWN BY HOT-WALL EPITAXY, JPN J A P 1, 32(10), 1993, pp. 4703-4708
Nitrogen-doped (N-doped) p-type ZnTe films have been prepared on GaAs(
100) substrates by hot wall epitaxy (HWE) for the first time. To obtai
n high-quality films with high hole concentrations, optimum growth con
ditions such as the substrate temperature and the growth rate were stu
died by X-ray and Photoluminescence (PL) measurements. The hole concen
tration and Hall mobility were 1.1 x 10(17) CM-3 and 52 CM2 V-1 s-1, r
espectively. The PL spectra of these films had a excitonic emission (I
1), indicating high crystalline quality. The activation energy of the
nitrogen acceptor was calculated, for the first time, to be 51 meV fro
m the donor-acceptor (DA) emission energy. The existence of nitrogen i
n the films was confirmed by secondary ion mass spectroscopy (SIMS). T
he N-doped ZnTe-ZnSe SL's were also prepared and the hole concentratio
n and Hall mobility were 2.3 x 10(18) CM-3 and 36 cm2 V-1 s-1, respect
ively.