CHARACTERISTICS OF NITROGEN-DOPED ZNTE FILMS AND ZNTE-ZNSE SUPERLATTICES GROWN BY HOT-WALL EPITAXY

Nitrogen-doped (N-doped) p-type ZnTe films have been prepared on GaAs( 100) substrates by hot wall epitaxy (HWE) for the first time. To obtai n high-quality films with high hole concentrations, optimum growth con ditions such as the substrate temperature and the growth rate were stu died by X-ray and Photoluminescence (PL) measurements. The hole concen tration and Hall mobility were 1.1 x 10(17) CM-3 and 52 CM2 V-1 s-1, r espectively. The PL spectra of these films had a excitonic emission (I 1), indicating high crystalline quality. The activation energy of the nitrogen acceptor was calculated, for the first time, to be 51 meV fro m the donor-acceptor (DA) emission energy. The existence of nitrogen i n the films was confirmed by secondary ion mass spectroscopy (SIMS). T he N-doped ZnTe-ZnSe SL's were also prepared and the hole concentratio n and Hall mobility were 2.3 x 10(18) CM-3 and 36 cm2 V-1 s-1, respect ively.