MISORIENTATION IN GAAS ON SI GROWN BY MIGRATION-ENHANCED EPITAXY - COMMENTS

It is shown that the data reported by Nozawa and Horikoshi [Jpn. J. Ap pl. Phys. 32 (1993) 626 on the tilting of GaAs layers grown on Si by m igration-enhanced epitaxy can be explained by the layer-by-layer natur e of the growth process. It is also pointed out that the azimuthal ang ular shift of the GaAs-Si X-ray rocking curve peak position from the s ubstrate miscut direction does not hint to the in-plane rotation of th e epilayer as a whole.