This paper presents an approach for fabricating surfaces with precise
positional control of chemical functionalities at submicron resolution
s using direct patterning of organosilane self-assembled monolayer fil
ms (SAFs) with lithographic exposure tools. Although the process is of
general applicability, microelectronics applications are emphasized h
ere. The suitability of monolayer SAFs for high resolution patterning
is discussed and deep UV photochemical mechanisms for several classes
of SAFs are presented. Selective electroless metallization of patterne
d SAFs provides sufficient plasma etch resistance and compatibility wi
th current microelectronics processing technologies to allow fabricati
on of functioning Si MOSFET test structures. Unique features of the pr
ocess, including an ability to utilize a variety of substrates and con
trol metal film adhesion by judicious choice of the SAF, are discussed
.