SUB-0.1 MU-M RESIST PATTERNING IN SOFT-X-RAY (13NM) PROJECTION LITHOGRAPHY

Poly (methylmethacrylate) (PMMA), resist performance for soft X-ray pr ojection lithography (SXPL) at an exposure wavelength of 13 nm was inv estigated with an special emphasis on development condition dependence . The resist contrast value gamma for 13 nm SXPL showed strong depende nce on the developer, in contrast with proximity X-ray lithography (XR L) at the peak-wavelength of 0.7 nm. With an optimized developer, a re solution as high as 0.05 mum was achieved. A wide focus range of 1.5 m um with a 0.1 mum line-and-space pattern was also confirmed.