PROCESS LATITUDE FOR SUB-200-NANOMETER SYNCHROTRON ORBITAL RADIATION X-RAY-LITHOGRAPHY

Authors
OERTEL HK CHLEBEK J WEISS M
Citation
Hk. Oertel et al., PROCESS LATITUDE FOR SUB-200-NANOMETER SYNCHROTRON ORBITAL RADIATION X-RAY-LITHOGRAPHY, JPN J A P 1, 32(12B), 1993, pp. 5966-5970
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
32
Issue
12B
Year of publication
1993
Pages
5966 - 5970
Database
ISI
SICI code
Abstract
Image intensity profile and resist Profile calculations using the X-ra y modeling and simulation (XMAS) program are presented for storagering X-ray lithography proximity printing. The calculations indicate that there exists a sufficiently wide process window for the replication of 100-nm-wide absorber features, using an optimized set of parameters. The effect of nonvertical absorber sidewalls on the process window is investigated.