Thermal desorption from 15 keV, fluorine positive ion (F+)-implanted S
iO2 has been studied using thermal desorption and X-ray photoelectron
spectroscopies. Primary fluorine-related outgassing species SiF3+, gas
eous O2, and a great amount of water evolution representing the SiO2 n
etwork modification were observed. From comparatively well-investigate
d desorption spectra from NF3/Ar reactive-ion-etching (RIE)-exposed an
d CF4/Ar RIE-exposed SiO2, similar outgassing species and the desorpti
on temperatures were observed. The desorption states for SiF3+ were no
t single as previously reported in the study of desorption states rela
ted to the thermal reaction with fluorocarbon polymer, but several des
orption pathways existed. The observed similarity for SiF3+ is conside
red to be related to the induced microstructural changes, which possib
ly determine the final desorption path in RIE.