GAAS ALAS TRENCH-BURIED QUANTUM WIRES (LESS-THAN-20NMX20NM) FABRICATED BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON NONPLANAR SUBSTRATES/

We report the fabrication of quantum wires buried in U-grooved trenche s grown by metalorganic chemical vapor deposition on V-grooved (001) s ubstrates. These trench structures with vertical (110) sidewalls were formed as a result of the faceting of (110) planes, and lateral growth of these planes reduced the trench width to less than 20 nm. A cross- sectional scanning electron micrograph shows that these trench-buried structures have GaAs wires of about 20 nm lateral width. Photoluminesc ence (PL) blue shifts and strong PL anisotropy confirm two-dimensional quantum confinement.