EFFECTS OF ELECTRON-IRRADIATION ON 2-DIMENSIONAL ELECTRON-GAS IN ALGAAS GAAS HETEROSTRUCTURE/

This paper describes how the two-dimensional electron gases in AlGaAs/ GaAs heterostructures are degraded by low-energy electron irradiation. Both the electron mobility and the two-dimensional carriers are shown to decrease considerably by a 1 X 10(17)/cm2 irradiation with the inc ident electron energy of 8 keV. Comparing the experimental results bot h with the Monte Carlo simulation and with the theoretical mobility ca lculation, we speculated that the mobility degradation and the 2D carr ier compensation are partly caused by the formation of complex defects in the GaAs buff er layer which are due to the excitations of core el ectrons of As and that the mobility is further degraded by the formati on of short-range scatterers in the AlGaAs/GaAs heterointerface.