SIMULATION OF SCANNING ELECTRON-MICROSCOPE IMAGE FOR TRENCH STRUCTURES

Scanning electron microscope images for trench structures are simulate d by calculating electron trajectories with a Monte Carlo method. Elec tron trajectories both inside and outside the trench are fully simulat ed. Using this simulation, the natures of the secondary electron image and the backscattered electron image are quantified. The signal varia tions are shown as functions of the size of the trench, the primary el ectron energy, and the beam diameter.