A STUDY AND OPTOELECTRONIC VERIFICATION OF ALGAAS GAAS HETEROJUNCTIONBIPOLAR-TRANSISTOR LARGE-SIGNAL CHARACTERISTICS/

Authors
FRANKEL MY PAVLIDIS D MOUROU GA
Citation
My. Frankel et al., A STUDY AND OPTOELECTRONIC VERIFICATION OF ALGAAS GAAS HETEROJUNCTIONBIPOLAR-TRANSISTOR LARGE-SIGNAL CHARACTERISTICS/, IEEE journal of quantum electronics, 29(11), 1993, pp. 2799-2804
Citations number
26
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE journal of quantum electronics → ACNP
ISSN journal
00189197
Volume
29
Issue
11
Year of publication
1993
Pages
2799 - 2804
Database
ISI
SICI code
0018-9197(1993)29:11<2799:ASAOVO>2.0.ZU;2-R
Abstract
A hybrid optoelectronic measurement system is constructed and used to obtain the large-signal characteristics of AlGaAs/GaAs heterojunction bipolar transistors. The measurement system utilizes a terahertz-bandw idth electrooptic transducer gated by 100-fs laser pulses to interroga te the time-domain waveforms at the device input and output nodes. A m icrowave signal phase-locked to the laser pulse-train is used to synch ronously excite the device in both small-signal and large-signal regim es. The measurement system is capable of 50-GHz bandwidth and provides time-domain voltage waveforms that carl be used directly to verify th e time-domain results of the large-signal analysis.